OPC model enhancement using parameter sensitivity methodology

Brian S. Ward; Martin Drapeau

doi:10.1117/12.793030

19 May 2008 OPC model enhancement using parameter sensitivity methodology

Brian S. Ward, Martin Drapeau

Proceedings Volume 7028, Photomask and Next-Generation Lithography Mask Technology XV; 70280N (2008) https://doi.org/10.1117/12.793030
Event: Photomask and NGL Mask Technology XV, 2008, Yokohama, Japan

Abstract

An approach to parameter sensitivity methodology for OPC modeling is enhanced, automated, and applied to generate production-quality models for a 32-nm logic node poly layer. Two parameter sensitivity models are generated and compared to a baseline model from the same experimental dataset. The three models are thoroughly investigated to demonstrate that parameter sensitivity can enhance advanced OPC models with essentially no impact on the time required for model optimization. Results also indicate that parameter sensitivity, if used improperly, can decrease model quality.

Citation Download Citation

Brian S. Ward and Martin Drapeau "OPC model enhancement using parameter sensitivity methodology", Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70280N (19 May 2008); https://doi.org/10.1117/12.793030

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