19 May 2008 Describing litho-constrained layout by a high-resolution model filter
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Proceedings Volume 7028, Photomask and Next-Generation Lithography Mask Technology XV; 70280S (2008) https://doi.org/10.1117/12.793035
Event: Photomask and NGL Mask Technology XV, 2008, Yokohama, Japan
Abstract
A novel high-resolution model (HRM) filtering technique was proposed to describe litho-constrained layouts. Litho-constrained layouts are layouts that have difficulties to pattern or are highly sensitive to process-fluctuations under current lithography technologies. HRM applies a short-wavelength (or high NA) model simulation directly on the pre-OPC, original design layout to filter out low spatial-frequency regions, and retain high spatial-frequency components which are litho-constrained. Since no OPC neither mask-synthesis steps are involved, this new technique is highly efficient in run time and can be used in design stage to detect and fix litho-constrained patterns. This method has successfully captured all the hot-spots with less than 15% overshoots on a realistic 80 mm2 full-chip M1 layout in 65nm technology node. A step by step derivation of this HRM technique is presented in this paper.
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Min-Chun Tsai, Min-Chun Tsai, } "Describing litho-constrained layout by a high-resolution model filter", Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70280S (19 May 2008); doi: 10.1117/12.793035; https://doi.org/10.1117/12.793035
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