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19 May 2008 Impact of patterning strategy on mask fabrication beyond 32nm
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Proceedings Volume 7028, Photomask and Next-Generation Lithography Mask Technology XV; 702814 (2008) https://doi.org/10.1117/12.793045
Event: Photomask and NGL Mask Technology XV, 2008, Yokohama, Japan
Abstract
Mask specifications of the pitch splitting type double patterning for 22nm node and beyond in logic devices have been discussed. The influences of the mask CD error and the mask induced overlay error on wafer CD have been investigated in both cases of bright field and dark filed. The specification for intra-layer overlay alignment is much smaller than inter-layer one. The specification of mask CD uniformity for dark is more challenging. In order to overcome the technology gap between single patterning and double patterning, many things will have to be improved.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shoji Mimotogi, Tomotaka Higaki, Hideki Kanai, Satoshi Tanaka, Masaki Satake, Yosuke Kitamura, Katsuyoshi Kodera, Kazutaka Ishigo, Takuya Kono, Masafumi Asano, Kazuhiro Takahata, and Soichi Inoue "Impact of patterning strategy on mask fabrication beyond 32nm", Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 702814 (19 May 2008); https://doi.org/10.1117/12.793045
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