19 May 2008 The source of carbon contamination for EUV mask production
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Proceedings Volume 7028, Photomask and Next-Generation Lithography Mask Technology XV; 70281U (2008) https://doi.org/10.1117/12.799668
Event: Photomask and NGL Mask Technology XV, 2008, Yokohama, Japan
As the semiconductor industry requires lithography suitable for 32-nm node, extreme ultraviolet lithography (EUVL) has the potential to provide this capability for the mass fabrication of semiconductor devices. But because an extreme ultraviolet (EUV) lithography exposure system is operated in vacuum, during irradiation by EUV light, hydrocarbons are decomposed in vacuum1-3, for example, by the out-gassing from EUV mask, and contaminate the surface of imaging optics which is coated with Mo/Si multi-layers with carbon. Thus, this contamination not only reduces the reflectivity of the Mo/Si multi-layers of imaging optics and degrades the exposure uniformity, but also degrades the resolution of the imaging optics. In this study, as we examined the volume of the out-gassing and the species from EUV mask after every process for EUV mask production, we will control the carbon contamination of EUV mask. Keywords: EUV, carbon contamination, reflectance, out-gassing
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yongdae Kim, Yongdae Kim, Junsik Lee, Junsik Lee, Yongkyoo Choi, Yongkyoo Choi, Changreol Kim, Changreol Kim, } "The source of carbon contamination for EUV mask production", Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70281U (19 May 2008); doi: 10.1117/12.799668; https://doi.org/10.1117/12.799668

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