19 May 2008 Optimization of measuring conditions for templates of UV nano imprint lithography
Author Affiliations +
Proceedings Volume 7028, Photomask and Next-Generation Lithography Mask Technology XV; 70281V (2008) https://doi.org/10.1117/12.793072
Event: Photomask and NGL Mask Technology XV, 2008, Yokohama, Japan
Abstract
Templates for UV-Nano-imprint lithography (NIL) have been rapidly improved these days. Feature sizes of the templates have come to be less than 30 nm. Consequently, metrology has been also one of the challenges to fabricate templates for UV-NIL. There are many issues in metrology for the templates; for instance, necessity of the higher resolution, critical dimension (CD) accuracy and repeatability for measurement tools. In this paper, we will focus on an optimization of measuring conditions for the templates of UV-NIL. And we will discuss some measuring techniques for CD precision and repeatability using a CD-SEM and a scanning probe microscope.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kouji Yoshida, Kouji Yoshida, Kouichirou Kojima, Kouichirou Kojima, Makoto Abe, Makoto Abe, Shiho Sasaki, Shiho Sasaki, Masaaki Kurihara, Masaaki Kurihara, Yasutaka Morikawa, Yasutaka Morikawa, Hiroshi Mohri, Hiroshi Mohri, Naoya Hayashi, Naoya Hayashi, } "Optimization of measuring conditions for templates of UV nano imprint lithography", Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70281V (19 May 2008); doi: 10.1117/12.793072; https://doi.org/10.1117/12.793072
PROCEEDINGS
8 PAGES


SHARE
Back to Top