Translator Disclaimer
19 May 2008 UV-NIL mask making and imprint evaluation
Author Affiliations +
Proceedings Volume 7028, Photomask and Next-Generation Lithography Mask Technology XV; 70281W (2008) https://doi.org/10.1117/12.793073
Event: Photomask and NGL Mask Technology XV, 2008, Yokohama, Japan
Abstract
UV NIL shows excellent resolution capability with remarkable low line edge roughness, and has been attracting pioneers in the industry who were searching for the finest patterns. We have been focused on the resolution improvement in mask making, and with a 100kV acceleration voltage EB writer process, we have achieved down to 18nm resolution, and have established a mask making process to meet the requirements of the pioneers. Usually such masks needed just a small field (several hundred microns square or so). Now, UV NIL exploration seems to have reached the step of feasibility study for mass production. Here, instead of a small field, a full chip field mask is required, though the resolution demand is not as tough as for the extremely advanced usage. The 100kV EB writers are adopting spot beams to generate the pattern and have a fatally low throughput if we need full chip writing. In this work, we focused on the 50keV variable shaped beam (VSB) EB writers, which are used in current 4X photomask manufacturing. The 50kV VSB writers can generate full chip pattern in a reasonable time, and by choosing the right patterning material and process, we could achieve resolution down to 32nm. Our initial results of 32nm class NIL masks with full chip field size will be shown and resolution improvement plan to further technology nodes will be discussed.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Akiko Fujii, Yuko Sakai, Jun Mizuochi, Takaaki Hiraka, Satoshi Yusa, Koki Kuriyama, Masashi Sakaki, Takanori Sutou, Shiho Sasaki, Yasutaka Morikawa, Hiroshi Mohri, and Naoya Hayashi "UV-NIL mask making and imprint evaluation", Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70281W (19 May 2008); doi: 10.1117/12.793073; https://doi.org/10.1117/12.793073
PROCEEDINGS
12 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

UV NIL template making and imprint evaluation
Proceedings of SPIE (October 19 2008)
UV-NIL templates for the 22nm node and beyond
Proceedings of SPIE (November 15 2007)
Progress of UV-NIL template making
Proceedings of SPIE (May 11 2009)
NIL template making and imprint evaluation
Proceedings of SPIE (October 19 2006)
UV NIL template making and imprint evaluation
Proceedings of SPIE (May 27 2009)

Back to Top