19 May 2008 Novel model of haze generation on photomask
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Proceedings Volume 7028, Photomask and Next-Generation Lithography Mask Technology XV; 702829 (2008); doi: 10.1117/12.793083
Event: Photomask and NGL Mask Technology XV, 2008, Yokohama, Japan
ArF lithography sometimes generates the haze defects on the photomask substrate, resulting in serious yield deterioration in ULSI production. In order to solve this problem, experimental and theoretical studies have been carried out on the generated haze defects. In characterizing the haze defects, the composition and chemical structure of the haze defects were analyzed by focusing on 1.0 x 0.3μm sizes defects using Raman, ToF-SIMS and AES spectroscopy with their highest spatial and mass resolution level. To confirm the experimental analyses, theoretical ab initio molecular orbital calculations were carried out on the model compounds of the generated haze defects. These experimental and theoretical studies indicate that the haze defects on quartz surface consist of (NH4)2SO4 and that those on half-tone (HT) film surface, on the other hand, consist of (MoO3)x(SO4)y(NH4)z complex including Mo from HT film material. In the latter case, NH4 ion was observed only in surface region of the haze defects. Based on these results, we have proposed a novel model of haze generation mechanism on quartz and HT film surfaces of photomask substrate.
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Haruko Akutsu, Shinji Yamaguchi, Kyo Otsubo, Makiko Tamaoki, Ayako Shimazaki, Reiko Yoshimura, Fumihiko Aiga, Tsukasa Tada, "Novel model of haze generation on photomask", Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 702829 (19 May 2008); doi: 10.1117/12.793083; https://doi.org/10.1117/12.793083

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