19 May 2008 Post cleaned surface modification treatment to prevent near pellicle haze generation in sulfate free cleaned ArF EAPSM
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Proceedings Volume 7028, Photomask and Next-Generation Lithography Mask Technology XV; 70282C (2008) https://doi.org/10.1117/12.793086
Event: Photomask and NGL Mask Technology XV, 2008, Yokohama, Japan
Abstract
A lot of research has been carried on sulfate free cleaning process to minimize haze generating residual ions on mask surface. However sulfate free cleaned mask has been suffered from short life time of haze generation than we expected, because pellicle outgassing combines with ammonium residuals and formed haze near pellicle frame area and decrease yield. Therefore physical and PKL developed chemical surface modification treatment was studied and evaluated in term of near pellicle haze threshold energy, surface energy of mask substrate components (Qz/MoSi/Cr), AFM and AES depth profile. Dehydration bake treatment (physical surface modification treatment) and PKL developed chemical treatment increased near pellicle haze threshold energy by 2.5 and 4 times, respectively. Surface modification treatments didn't show negative effect on phase angle and transmittance losses of ArF EAPSM mask. The effect of illumination sources on surface modification treatment was also studied.
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Manish Patil, Jong-Min Kim, Sung-Mo Jung, Ik-Boum Hur, Sang-Soo Choi, Yong Hyun Lee, "Post cleaned surface modification treatment to prevent near pellicle haze generation in sulfate free cleaned ArF EAPSM", Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70282C (19 May 2008); doi: 10.1117/12.793086; https://doi.org/10.1117/12.793086
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