19 May 2008 Comparison of TeraStar SL1, TeraScanHR DDR, DDT and SL2 to identify an efficient mask re-qualification inspection mode for 7Xnm half pitch design node production reticles in advanced memory wafer fab
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Proceedings Volume 7028, Photomask and Next-Generation Lithography Mask Technology XV; 70282M (2008) https://doi.org/10.1117/12.793092
Event: Photomask and NGL Mask Technology XV, 2008, Yokohama, Japan
Abstract
This paper discusses the most efficient mask re-qualification inspection mode for 7Xnm half pitch design node production memory reticles in advanced memory wafer fab. By comparing overall performance including inspectability, sensitivity, and throughput for 8 different inspection modes, P150 Pixel Die-to-Die Reflected Light (P150 DDR) was identified to be the most desirable inspection mode for the specific use case where only one inspection mode is available. The evaluation was executed on the most critical layers - active, gate and contact layer. P150 DDR demonstrates the capability of providing early warning for the crystal growth type defects on both quartz and MoSi surfaces. It also showed good sensitivity for capturing small contamination defects in the dense Line/Space or Contact/Hole pattern areas. With a fast inspection scan speed and easy to use set up, TeraScanHR P150 DDR offers the best cost of ownership among all inspection modes. To gain higher sensitivity for smaller design nodes, TeraScanHR P150 DDR can be easily extended to smaller inspection pixels with minimum impact on productivity.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Koji Kaneko, Koji Kaneko, Takanobu Kobayashi, Takanobu Kobayashi, Jinggang Zhu, Jinggang Zhu, Norihiko Takatsu, Norihiko Takatsu, Paul Yu, Paul Yu, Kosuke Ito, Kosuke Ito, Toshiaki Kojima, Toshiaki Kojima, Yoshinori Nagaoka, Yoshinori Nagaoka, } "Comparison of TeraStar SL1, TeraScanHR DDR, DDT and SL2 to identify an efficient mask re-qualification inspection mode for 7Xnm half pitch design node production reticles in advanced memory wafer fab", Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70282M (19 May 2008); doi: 10.1117/12.793092; https://doi.org/10.1117/12.793092
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