Paper
19 May 2008 Inspectability of PSM masks for the 32nm node using STARlight2+
Chain-Ting Huang, Yung-Feng Cheng, Shih-Ming Kuo, Chun-Hsien Huang, Swapnajit Chakravarty, Joe Huang, Jeff Lin, Den Wang
Author Affiliations +
Abstract
Two aspects are critical when a new reticle type is introduced in a wafer fab: printability and reticle inspection. In this study, we inspected 4 PSM reticles at the 45nm technology node, at P90, on the 5xx TeraScanHR platform. We successfully inspected SL2+ reticles of the PSM type at P90. We forecast that in a high volume 32nm node production environment, P72 SL2+ will address the inspectability challenges associated with PSM masks. This is based on strict requirements for sensitivity on contamination defects, inspectability, and cost of ownership, as when UMC addressed their wafer printability issues.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chain-Ting Huang, Yung-Feng Cheng, Shih-Ming Kuo, Chun-Hsien Huang, Swapnajit Chakravarty, Joe Huang, Jeff Lin, and Den Wang "Inspectability of PSM masks for the 32nm node using STARlight2+", Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70282P (19 May 2008); https://doi.org/10.1117/12.793095
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KEYWORDS
Inspection

Reticles

Photomasks

Calibration

Image processing

Reflectivity

Contamination

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