19 May 2008 Inspectability of PSM masks for the 32nm node using STARlight2+
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Proceedings Volume 7028, Photomask and Next-Generation Lithography Mask Technology XV; 70282P (2008) https://doi.org/10.1117/12.793095
Event: Photomask and NGL Mask Technology XV, 2008, Yokohama, Japan
Two aspects are critical when a new reticle type is introduced in a wafer fab: printability and reticle inspection. In this study, we inspected 4 PSM reticles at the 45nm technology node, at P90, on the 5xx TeraScanHR platform. We successfully inspected SL2+ reticles of the PSM type at P90. We forecast that in a high volume 32nm node production environment, P72 SL2+ will address the inspectability challenges associated with PSM masks. This is based on strict requirements for sensitivity on contamination defects, inspectability, and cost of ownership, as when UMC addressed their wafer printability issues.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chain-Ting Huang, Chain-Ting Huang, Yung-Feng Cheng, Yung-Feng Cheng, Shih-Ming Kuo, Shih-Ming Kuo, Chun-Hsien Huang, Chun-Hsien Huang, Swapnajit Chakravarty, Swapnajit Chakravarty, Joe Huang, Joe Huang, Jeff Lin, Jeff Lin, Den Wang, Den Wang, } "Inspectability of PSM masks for the 32nm node using STARlight2+", Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70282P (19 May 2008); doi: 10.1117/12.793095; https://doi.org/10.1117/12.793095


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