19 May 2008 Increasing the predictability of AIMS measurements by coupling to resist simulations
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Proceedings Volume 7028, Photomask and Next-Generation Lithography Mask Technology XV; 70282S (2008) https://doi.org/10.1117/12.793098
Event: Photomask and NGL Mask Technology XV, 2008, Yokohama, Japan
Abstract
This paper studies the application of resist models to AIMSTM images. Measured AIMSTM data were coupled with resist simulations of the Fraunhofer IISB research and development lithography simulator Dr.LiTHO and with a compact resist model developed by Carl Zeiss SMS. Through-focus image data of the AIMSTM are transformed into a bulk image--the intensity distribution within the resist. This bulk image is used to compute the concentration of photo-acid after exposure and the following resist processing. In the result a resist profile is obtained, which can be used to extract the printed wafer linewidth and other data. Additionally, a compact resist model developed by Carl Zeiss SMS was directly applied to the AIMSTM data. The described procedures are used to determine dose latitudes for lines and spaces with different pitches. The obtained data are compared to actual wafer prints for a 1.2 NA system.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Balint Meliorisz, Balint Meliorisz, Andreas Erdmann, Andreas Erdmann, Thomas Schnattinger, Thomas Schnattinger, Ulrich Ströβner, Ulrich Ströβner, Thomas Scherübl, Thomas Scherübl, Peter De Bisschop, Peter De Bisschop, Vicky Philipsen, Vicky Philipsen, } "Increasing the predictability of AIMS measurements by coupling to resist simulations", Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70282S (19 May 2008); doi: 10.1117/12.793098; https://doi.org/10.1117/12.793098
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