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19 May 2008 Wafer level CD metrology on photomasks using aerial imaging technology
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Proceedings Volume 7028, Photomask and Next-Generation Lithography Mask Technology XV; 70282W (2008)
Event: Photomask and NGL Mask Technology XV, 2008, Yokohama, Japan
Recently more and more mask designs for critical layers involve strong OPC which increases the complexity for standard CD SEM mask measurements and conclusive interpretation of results. For wafer printing the wafer level CD is the crucial measure if the mask can be successfully used in production. Recent developments in the AIMSTM software have enabled the user to use the tool for wafer level CD metrology under scanner conditions. The advantage of this methodology is that AIMSTM does see the CD with scanner eyes. All lithographic relevant effects like OPC imaging which can not be measured by other tools like mask CD SEM will be captured optically by the AIMSTM principle. Therefore, measuring the CD uniformity of the mask by using AIMSTM will lead to added value in mask metrology. With decreasing feature sizes the requirements for CD metrology do increase. In this feasibility study a new prototype algorithm for measuring the lithographically relevant AIMSTM CD with sub pixel accuracy has been tested. It will be demonstrated that by using this algorithm line edge and line width roughness can be measured accurately by an AIMSTM image. Furthermore, CD repeatability and tool matching results will be shown.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Thomas Scherübl, Ulrich Strößner, Holger Seitz, Robert Birkner, and Rigo Richter "Wafer level CD metrology on photomasks using aerial imaging technology", Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70282W (19 May 2008);


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