19 May 2008 Predicting lithography costs: guidance for ≤ 32 nm patterning solutions
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Proceedings Volume 7028, Photomask and Next-Generation Lithography Mask Technology XV; 70283N (2008) https://doi.org/10.1117/12.793129
Event: Photomask and NGL Mask Technology XV, 2008, Yokohama, Japan
Abstract
Extending lithography to 32 nm and 22 nm half pitch requires the introduction of new lithography technologies, such as EUVL or high-index immersion, or new techniques, such as double patterning. All of these techniques introduce large changes into the single exposure immersion lithography process as used for the 45 nm half pitch node. Therefore, cost per wafer is a concern. In this paper, total patterning costs are estimated for the 32 nm and 22 nm half pitch nodes through the application of cost-of-ownership models based on the tool, mask, and process costs. For all cases, the cost of patterning at 32 nm half pitch for critical layers will be more expensive than in prior generations. Mask costs are observed to be a significant component of lithography costs even up to a mask usage of 10,000 wafers/mask in most cases. The more simple structure of EUVL masks reduces the mask cost component and results in EUVL being the most cost-effective patterning solution under the assumptions of high throughput and good mask blank defect density.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrew J. Hazelton, Andrea Wüest, Greg Hughes, and Michael Lercel "Predicting lithography costs: guidance for ≤ 32 nm patterning solutions", Proc. SPIE 7028, Photomask and Next-Generation Lithography Mask Technology XV, 70283N (19 May 2008); doi: 10.1117/12.793129; https://doi.org/10.1117/12.793129
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