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4 September 2008 Ultraviolet cross-link process using spin-coating materials for advanced planarization and sublimate defect reduction
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Abstract
This study focuses on ultraviolet cross-link process using spin-coating materials for advanced planarization and sublimate defect reduction in the advanced process techniques of semiconductor, display, and new electronic devises. The ultraviolet cross-link process and spin-coating material have been optimized and studied for excellent global planarization property. The newest approach by excellent collaborations from both process and material has the planarization property on an irregular substrate such as the patterned steps, holes and trenches to increase the depth of focus and pattering resolution. After planarizing the substrate surface, the ultraviolet planar materials are used to provide the dry or wet etching selectivities against the under-layer, and specially, avoid the dry or wet etching damage as an etch protecting layer. In addition, we reported the newest process using developed ultraviolet irradiation tool on in-line system in an coater equipment (TOKYO ELECTRON LTD CLEAN TRACKTM) for manufactability with higher throughput (Spin-coating time: less than 30 sec., ultraviolet irradiation time: less than 5 sec, low temperature baking time: less than 60 sec.) Using this technique, a remarkable reduction in via topography with 1.1 μm as a depth and 0.9-1.0 μm as a diameter has been achieved excellent thickness bias less than 20 nm. And, the sublimate amount of the film obtained from the developed ultraviolet planar material was very low as compared with that of the film obtained from current standard thermal cross-link material as the reference.
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Satoshi Takei, Makoto Muramatsu, Yusuke Horiguchi, Tomoya Ohashi, Yasuyuki Nakajima, Yuichi Mano, Mitsuaki Iwashita, Katsuhiro Tsuchiya, and Tadayuki Yamaguchi "Ultraviolet cross-link process using spin-coating materials for advanced planarization and sublimate defect reduction", Proc. SPIE 7030, Nanophotonic Materials V, 703010 (4 September 2008); https://doi.org/10.1117/12.797401
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