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28 August 2008 Highly efficient heating assisted tip-enhanced Raman spectroscopy
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Abstract
We present a tip-enhanced Raman spectroscopy (TERS) system that permits efficient illumination and detection of optical properties in the visible range to obtain high contrasts Raman signals from strained silicon (ε-Si) assembled on silicon germanium substrate using an edge filter. The cut-off investigation in a depolarized TERS configuration. We overshadow wavelength of the edge filter is tuned by changing the angle of incident beam to deliver high incident power and effectively collect scattered near-field signals for nanoscopic strong far-field background signals from Raman active materials by utilizing the results obtained from depolarized surface-enhanced Raman scattering experiments in conjunction with silicon Raman tensor calculation to quantify which polarizer, analyzer and sample azimuth combination gives the minimum far-field signals. Here, we utilize the s-polarization instead of p-polarized light in conjunction with polarization properties of ε-Si to obtain a high contrast Raman signal. We found that for imaging Raman active and bulk crystalline materials such as silicon, background signal suppression (s-illumination) is more important than the field enhancement with strong far-field signal levels (p-polarization). The utilization of an edge filter for shorter collection time, depolarized configuration for higher contrast and tip heating for higher resolution are discussed.
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Alvarado Tarun, Norihiko Hayazawa, Masashi Motohashi, and Satoshi Kawata "Highly efficient heating assisted tip-enhanced Raman spectroscopy", Proc. SPIE 7033, Plasmonics: Nanoimaging, Nanofabrication, and Their Applications IV, 70330C (28 August 2008); https://doi.org/10.1117/12.793999
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