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21 August 2008 Negative magnetoresistance due to weak localization and electron-electron interactions effects in metallic n-type InP semiconductor at very low temperatures with magnetic field
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Abstract
We present magnetoresistance measurements on metallic n-type InP sample with a carrier density n=1.241023 m-3, far from the metal-insulator transition (MIT). The experiments were carried out at low temperature in the range 4.2-0.6 K and in magnetic fields up to 1 T. We have observed negative magnetoresistance (NMR) behaviour, and the experimental data are interpreted in terms of the weak localization and the effect of electron-electron interactions. Experimental data are compared with available theoretical models using a non-linear regression method with adjustable parameters τε and F. τε is the inelastic scattering time and F is the Hartree-Fock constant.
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A. El kaaouachi, R. Abdia, A. Nafidi, G. Biskupski, and J. Hemine "Negative magnetoresistance due to weak localization and electron-electron interactions effects in metallic n-type InP semiconductor at very low temperatures with magnetic field", Proc. SPIE 7034, Physical Chemistry of Interfaces and Nanomaterials VII, 70340Q (21 August 2008); https://doi.org/10.1117/12.793623
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