30 August 2008 Spin-dependent tunneling through a spin-orbit-split barrier
Author Affiliations +
Proceedings Volume 7036, Spintronics; 70360M (2008) https://doi.org/10.1117/12.797997
Event: NanoScience + Engineering, 2008, San Diego, California, United States
We consider spin-dependent tunneling through a gallium arsenide barrier, a material which has no inversion symmetry. We are dealing with free electrons, with one effective mass and a spin-splitting in the barrier material. When we take into account both the spin-orbit interaction and the absence of the inversion symmetry, the evanescent states in the barrier are spin split and the tunneling process can become rather involved: Depending on the crystallographic direction, the incident wave experiences spin filtering during the tunneling or a spin precession around an effective magnetic field. These results open stimulating perspectives for spin manipulation in tunnel devices.
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Henri-Jean Drouhin, Henri-Jean Drouhin, Guy Fishman, Guy Fishman, T. L. Hoai Nguyen, T. L. Hoai Nguyen, Jean-Eric Wegrowe, Jean-Eric Wegrowe, } "Spin-dependent tunneling through a spin-orbit-split barrier", Proc. SPIE 7036, Spintronics, 70360M (30 August 2008); doi: 10.1117/12.797997; https://doi.org/10.1117/12.797997

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