4 September 2008 Hybrid magnetic tunnel junction/ spin filter device
Author Affiliations +
Proceedings Volume 7036, Spintronics; 70360U (2008) https://doi.org/10.1117/12.797406
Event: NanoScience + Engineering, 2008, San Diego, California, United States
Abstract
Surfaces and interfaces of complex oxides materials provide a rich playground for the exploration of novel magnetic properties not found in the bulk but also the development of functional interfaces to be incorporated into applications. We have recently been able to demonstrate a new type of hybrid spin filter/ magnetic tunnel junction. Our hybrid spin-filter/magnetic-tunnel junction devices are epitaxial oxide junctions of La0:7Sr0:3MnO3 and Fe3O4 electrodes with magnetic NiMn2O4 barrier layers. Depending on whether the barrier is in a paramagnetic or ferromagnetic state, the junction exhibits magnetic tunnel junction behavior where the spin polarized conduction is dominated by the electrode-barrier interface or spin filter behavior where conduction is dominated by barrier layer magnetism.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuri Suzuki, Yuri Suzuki, Brittany Nelson-Cheeseman, Brittany Nelson-Cheeseman, Franklin Wong, Franklin Wong, Rajesh Chopdekar, Rajesh Chopdekar, Elke Arenholz, Elke Arenholz, } "Hybrid magnetic tunnel junction/ spin filter device", Proc. SPIE 7036, Spintronics, 70360U (4 September 2008); doi: 10.1117/12.797406; https://doi.org/10.1117/12.797406
PROCEEDINGS
9 PAGES


SHARE
Back to Top