Novel spintronic devices using local anisotropy engineering in (Ga,Mn)As

C. Gould; G. Schmidt; L. W. Molenkamp

doi:10.1117/12.798109

4 September 2008 Novel spintronic devices using local anisotropy engineering in (Ga,Mn)As

C. Gould, G. Schmidt, L. W. Molenkamp

Proceedings Volume 7036, Spintronics; 703614 (2008) https://doi.org/10.1117/12.798109
Event: NanoScience + Engineering, 2008, San Diego, California, United States

Abstract

(Ga,Mn)As is the prototypical ferromagnetic semiconductor for spintronics devices, largely because of its rich magnetic and transport anisotropy. Until recently, the lack of local anisotropy control limited device design as all elements inherited the anisotropy of the parent layer. We report here on anisotropy control through lithographically engineered strain relaxation. By patterning the layer, we allow local and strain relaxation and controlled deformation of the crystal. Because of the strong spin orbit coupling, this leads to a new anisotropy term that can be tuned independently for each element of a compound device. We use this method to demonstrate a novel non-volatile memory element.

Citation Download Citation

C. Gould, G. Schmidt, and L. W. Molenkamp "Novel spintronic devices using local anisotropy engineering in (Ga,Mn)As", Proc. SPIE 7036, Spintronics, 703614 (4 September 2008); https://doi.org/10.1117/12.798109

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available