4 September 2008 Synthesis of ZnO nanowires for thin film network transistors
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Abstract
Zinc oxide nanowire networks are attractive as alternatives to organic and amorphous semiconductors due to their wide bandgap, flexibility and transparency. We demonstrate the fabrication of thin film transistors (TFT)s which utilize ZnO nanowires as the semiconducting channel. These thin film transistors can be transparent and flexible and processed at low temperatures on to a variety of substrates. The nanowire networks are created using a simple contact transfer method that is easily scalable. Apparent nanowire network mobility values can be as high as 3.8 cm2/Vs (effective thin film mobility: 0.03 cm2/Vs) in devices with 20μm channel lengths and ON/OFF ratios of up to 104.
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S. H. Dalal, S. H. Dalal, H. E. Unalan, H. E. Unalan, Y. Zhang, Y. Zhang, Pritesh Hiralal, Pritesh Hiralal, L. Gangloff, L. Gangloff, Andrew J. Flewitt, Andrew J. Flewitt, Gehan A. J. Amaratunga, Gehan A. J. Amaratunga, William I. Milne, William I. Milne, } "Synthesis of ZnO nanowires for thin film network transistors", Proc. SPIE 7037, Carbon Nanotubes and Associated Devices, 70370W (4 September 2008); doi: 10.1117/12.799598; https://doi.org/10.1117/12.799598
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