Characterization of nanotube nonvolatile memory device

Jeong-Won Kang

doi:10.1117/12.794400

4 September 2008 Characterization of nanotube nonvolatile memory device

Jeong-Won Kang

Proceedings Volume 7037, Carbon Nanotubes and Associated Devices; 70371D (2008) https://doi.org/10.1117/12.794400
Event: NanoScience + Engineering, 2008, San Diego, California, United States

Abstract

We propose a novel carbon-nanotube (CNT)-based nonvolatile memory, which can serve as a key building block for molecular-scale computers and perform molecular dynamics simulations to investigate the dynamic operation of a double-walled CNT memory. We find that the most important physical characteristics of the proposed nanometer-scale memory device are the bi-stability achieved by using the CNT inter-wall van der Waals interaction, the CNT-metal binding energies and the reversibility caused by the electrostatic attractive forces. Since the CNT shuttle can have a high kinetic energy during the transition, the dynamical collisions between the CNT and the metal electrodes are very important factors to be considered for design of an electrostatically telescoping CNT memory. The long collision time and the several rebounds cause a delay in the state transition.

Citation Download Citation

Jeong-Won Kang "Characterization of nanotube nonvolatile memory device", Proc. SPIE 7037, Carbon Nanotubes and Associated Devices, 70371D (4 September 2008); https://doi.org/10.1117/12.794400

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