Scaling behavior and negative gain of NAPD

X. Guo; S. G. Ma; X. Y. Zheng; K. L. Wang

doi:10.1117/12.795173

9 September 2008 Scaling behavior and negative gain of NAPD

X. Guo, S. G. Ma, X. Y. Zheng, K. L. Wang

Proceedings Volume 7039, Nanoengineering: Fabrication, Properties, Optics, and Devices V; 70390N (2008) https://doi.org/10.1117/12.795173
Event: NanoScience + Engineering, 2008, San Diego, California, United States

Abstract

The size-dependent and lamination-dependent I-V curves of nano-multiplication-region avalanche photodiode (NAPD) were measured with the sized of 100nm, 200nm, 1μm, and 10μm. The gain increases with the decrease of the multiplication-region size and illumination power. These data indicate the NAPD possesses the advantages of high gain and high sensitivity.

Citation Download Citation

X. Guo, S. G. Ma, X. Y. Zheng, and K. L. Wang "Scaling behavior and negative gain of NAPD", Proc. SPIE 7039, Nanoengineering: Fabrication, Properties, Optics, and Devices V, 70390N (9 September 2008); https://doi.org/10.1117/12.795173

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