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9 September 2008 Scaling behavior and negative gain of NAPD
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Abstract
The size-dependent and lamination-dependent I-V curves of nano-multiplication-region avalanche photodiode (NAPD) were measured with the sized of 100nm, 200nm, 1μm, and 10μm. The gain increases with the decrease of the multiplication-region size and illumination power. These data indicate the NAPD possesses the advantages of high gain and high sensitivity.
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X. Guo, S. G. Ma, X. Y. Zheng, and K. L. Wang "Scaling behavior and negative gain of NAPD", Proc. SPIE 7039, Nanoengineering: Fabrication, Properties, Optics, and Devices V, 70390N (9 September 2008); https://doi.org/10.1117/12.795173
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