9 September 2008 Impurity-free vacancy disordering of quantum heterostructures with SiOxNy encapsulants deposited by magnetron sputtering
Author Affiliations +
Abstract
Post-growth techniques such as impurity-free vacancy disordering (IFVD) are simple and effective avenues to monolithic integration of optoelectonic components. Sputter deposition of encapsulant films can enhance quantum well intermixing through IFVD and an additional mechanism involving surface damage during the sputtering process. In this study, these two mechanisms were compared in a multi-quantum well structure. The compositions of different silicon oxy-nitride films were controlled by sputter deposition in different ambient gases. These different encapsulants were used to initiate IFVD in the same heterostructure and the observed intermixing is compared to the film properties.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
I. R. McKerracher, I. R. McKerracher, L. Fu, L. Fu, H. H. Tan, H. H. Tan, C. Jagadish, C. Jagadish, "Impurity-free vacancy disordering of quantum heterostructures with SiOxNy encapsulants deposited by magnetron sputtering", Proc. SPIE 7039, Nanoengineering: Fabrication, Properties, Optics, and Devices V, 70390U (9 September 2008); doi: 10.1117/12.793568; https://doi.org/10.1117/12.793568
PROCEEDINGS
10 PAGES


SHARE
Back to Top