Design Criteria For Algaas/Gaas Integrated Optoelectronic Devices

L. D. Hutcheson; M. A. Mentzer

doi:10.1117/12.937164

10 March 1987 Design Criteria For Algaas/Gaas Integrated Optoelectronic Devices

L. D. Hutcheson, M. A. Mentzer

Proceedings Volume 0704, Integrated Optical Circuit Engineering IV; (1987) https://doi.org/10.1117/12.937164
Event: Cambridge Symposium-Fiber/LASE '86, 1986, Cambridge, MA, United States

Abstract

The throughput of data and signal processors is being pushed to ever increasing limits. One of the problems which must be addressed when designing processors to operate at high speeds is the extreme difficulty of transmitting data at gigabit/sec rates. Conventional electrical interconnect and switching technology is rapidly becoming a critical issue in the realization of systems using high-speed silicon and GaAs-based technologies. The performance of electrical interconnects is adversely affected by increases in capacitance and reflections due to impedance mismatches. One solution may be the use of optical inter-connects to transmit the data. In an attempt to develop high-speed optical interconnect systems, research programs have been started to integrate optoelectronic devices on a common substrate with high-speed GaAs electronics. A few MSI-level GaAs circuits have been demonstrated with clock rates above 1 GHz. It is possible to integrate optical emitters and optical receivers on the IC to perform the input/output functions required to interface the optics with high-speed processors. In this paper, AlGaAs/GaAs integrated optoelectronic devices are examined from the standpoint of what is needed to fabricate the devices and what performance can be expected for optical interconnects.

Citation Download Citation

L. D. Hutcheson and M. A. Mentzer "Design Criteria For Algaas/Gaas Integrated Optoelectronic Devices", Proc. SPIE 0704, Integrated Optical Circuit Engineering IV, (10 March 1987); https://doi.org/10.1117/12.937164

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