Kramers-Kronig Analysis Of Electro-Optical Switching In Silicon

Richard A. Soref; Brian R. Bennett

doi:10.1117/12.937193

10 March 1987 Kramers-Kronig Analysis Of Electro-Optical Switching In Silicon

Richard A. Soref, Brian R. Bennett

Proceedings Volume 0704, Integrated Optical Circuit Engineering IV; (1987) https://doi.org/10.1117/12.937193
Event: Cambridge Symposium-Fiber/LASE '86, 1986, Cambridge, MA, United States

Abstract

Crystalline silicon (c-Si) exhibits two electro-optical effects that are suitable for device-application in guided-wave modulators and switches. The effects are electrorefraction and free-carrier dispersion. The dispersion is controlled by electrical injection or electrical depletion of charge carriers. The magnitude of these effects has been calculated in this paper. The results for c-Si are compared to those for GaAs and InP. Low-loss guided-wave electro-optical phase modulation structures in c-Si are proposed here.

Citation Download Citation

Richard A. Soref and Brian R. Bennett "Kramers-Kronig Analysis Of Electro-Optical Switching In Silicon", Proc. SPIE 0704, Integrated Optical Circuit Engineering IV, (10 March 1987); https://doi.org/10.1117/12.937193

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