10 September 2008 Ultraviolet optical functions of ZnO and Ga2O3 thin films
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Abstract
Oxide semiconductors are essentially stable and environmental-friendly materials as well as possessing unique multifunctional properties in conjunction with ultraviolet (UV) to deep UV (DUV) optical functions. Among them ZnO and Ga2O3, having the bandgaps of about 3.3 and 4.9eV, respectively, are the promising candidates for exploring their UV applications. This paper reports recent advances of ZnO and Ga2O3 semiconductors focusing on their UV to DUV optical functions and device applications. Since ZnO has reached to the actual application stage and future development of the growth with chemical vapor deposition (CVD) is now strongly requested for mass production, here we introduce a novel CVD growth technique, that is, ultrasonic spray assisted CVD, allowing safe and low-cost growth of high quality ZnO-based films. Homoepitaxy on ZnO substrates resulted in step-flow growth, which has hardly been achieved by metalorganic CVD. Ga2O3 is expected for its DUV functions being supported by the availability of Ga2O3 bulk substrates. We show the potential applications of Ga2O3 substrates for highly sensitive DUV photodetectors as well as homoepitaxial step-flow growth of Ga2O3 thin films by molecular beam epitaxy.
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Shizuo Fujita, "Ultraviolet optical functions of ZnO and Ga2O3 thin films", Proc. SPIE 7041, Nanostructured Thin Films, 70410M (10 September 2008); doi: 10.1117/12.796141; https://doi.org/10.1117/12.796141
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