10 September 2008 Blue photoluminescence of PECVD SiC-based films
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Proceedings Volume 7041, Nanostructured Thin Films; 70410X (2008); doi: 10.1117/12.793676
Event: NanoScience + Engineering, 2008, San Diego, California, United States
Abstract
Amorphous and nanocrystalline SiC films enriched by oxygen were deposited by a PECVD technique using methyltrichlorosilane as a gas-precursor at substrate temperature in the range of 200-350 °C. X-ray diffraction (XRD) of the film deposited at 350°C exhibited the presence of SiC nano-crystallites. In this film the bright blue photoluminescence (PL) with spectrum that has a double-peak structure at 415 and 437 nm was obsearved at room temperature. The film was annealed at 650 and 850 °C in vacuum. Annealing at 650 °C strongly enhanced blue-white photoemission with maximum intensity around 470 cm-1. Moderate annealing was found to lead to strengthening the C-H, C-C and Si-C bonds as well as to increasing of a size of SiC grains embedded in the amorphous Si:C:O:H matrix. A further increase of annealing temperature up to 850 °C caused a drop of PL. Basing on an analysis of experimental data and first principles simulations of several hydrogenated SiC and Si nanoclusters, we suggest that the blue PL in as-deposited nc-SiC:H film and related Si-based nanostructures can be assigned to the radiative recombination in a radiative center (RC) located at the nanocrystallite surface, whereas the excitation of electron-hole pares occurs in nanocrystallite cores. It follows from our calculations that O-O structural groups can be considered as a radiative recombination centers. The recombination at band tails of the amorphous Si:C:O:H tissue (or at the oxygen-related defect states in a-SiOx, in the case of Si nanostructures) gives rise to a shoulder around 470 nm.
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V. I. Ivashchenko, A. V. Vasin, L. A. Ivashchenko, M. V. Ushakov, "Blue photoluminescence of PECVD SiC-based films", Proc. SPIE 7041, Nanostructured Thin Films, 70410X (10 September 2008); doi: 10.1117/12.793676; http://dx.doi.org/10.1117/12.793676
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KEYWORDS
Silicon carbide

Silicon

Annealing

Nanostructures

Chemical species

Absorption

Plasma enhanced chemical vapor deposition

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