9 September 2008 Measurement of oxide barrier-film thickness of Al alloy by electrochemical impedance spectroscopy at the nanometre scale
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Abstract
In this study, the effect of the annealing treatment on electrochemical behaviour and the oxide barrier-film thickness of anodized aluminium-magnesium (Al-Mg) alloy was investigated. Electrochemical parameters such as the polarization resistance (RP), solution resistance (RSol), alternating current impedance (Z), and the double layer capacitance (CdL) of the anodized Al-Mg alloy were determined in sulphuric acid solutions ranged from 0-10% H2SO4 by electrochemical impedance spectroscopy (EIS) methods. Then, the oxide film thickness of the anodized Al-Mg alloy was measured from the obtained electrochemical parameters as a function of the sulphuric acid concentration (0-10% H2SO4), in the as received sample and annealed sample conditions. The optimum thickness of the oxide film was detected for the as received samples (4.2nm) and for the annealed samples (0.63nm) in sulphuric acid concentrations of 4% and 2% H2SO4, respectively. The reason behind the oxide film thickness of the as received samples is greater than the one for the annealed samples, because the former samples are thermodynamically unstable (more chemically active) as compared to the annealed samples.
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K. Habib, "Measurement of oxide barrier-film thickness of Al alloy by electrochemical impedance spectroscopy at the nanometre scale", Proc. SPIE 7042, Instrumentation, Metrology, and Standards for Nanomanufacturing II, 70420E (9 September 2008); doi: 10.1117/12.792647; https://doi.org/10.1117/12.792647
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