10 September 2008 In-situ monitoring of rapid thermal processes (RTP) OF CU(IN,GA)(S,SE)2 by optical methods
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Abstract
Recent investigations of rapid thermal processing (RTP) of thin films using an in-situ optical process control in conjunction with in-situ energy-dispersive X-ray diffraction (EDXRD) are presented. The growth of Cu(In,Ga)(S,Se)2 layers by sulfurization or selenization of sputtered Cu-In-Ga precursor layers was realized by a heating ramp from room temperature to temperatures between 500 and 550°C during which elemental sulfur or elemental selenium was evaporated by radiative heating. White light scattered at the surface of the growing Cu(In,Ga)(S,Se)2 layers was monitored by a CCD camera in order to record in-situ the changing optical properties of the films. EDXRD was used to monitor the evolving structural properties of the growing films simultaneously. During the sulfurization and selenization process the growing films pass through various phase transition which could be correlated with the white-light scattering Detailed analysis of the time evolution of both signals (EDXRD and WLS) allowed to determine specific signatures in the WLS signals indicating the influence of the process parameters on the growth process of Cu(In,Ga)(S,Se)2.
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R. Hesse, H. Rodriguez Alvarez, R. Mainz, J. Lauche, P. Herdin, D. Abou-Ras, T. Unold, H-W. Schock, "In-situ monitoring of rapid thermal processes (RTP) OF CU(IN,GA)(S,SE)2 by optical methods", Proc. SPIE 7045, Photovoltaic Cell and Module Technologies II, 704505 (10 September 2008); doi: 10.1117/12.794489; https://doi.org/10.1117/12.794489
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