The Pattern Replication In Non-wetting Templates (PRINT) technique has been extended to patterning of isolated
features as well as embossed films of sub-500 nm "hard" inorganic oxides and nanocrystalline semiconductors and "soft"
semiconducting polymers including TiO2, SnO2, ZnO, ITO, BaTiO3, CdSe, poly(3-hexylthiophene) (P3HT), Poly[2-methoxy-5-(3',7'-dimethyloctyloxy)-1,4-phenylenevinylene] (MDMO-PPV), and other polythiophene derivatives. The
low surface energy, chemically resistant, air permeable elastomeric perflouropolyether (PFPE) based molds allow for
numerous materials to be patterned on a variety of substrates including glass, transparent conductive oxides, and thin
films of conducting polymer for a wide range of electronic and optical applications. Additionally, PRINT has been
employed to pattern features with aspect ratios greater than 1, deposit a second layer of features on top of an initial layer
without pattern destruction, and replicate sub-100 nm sized features for photovoltaics applications. Materials and
patterns generated in this work were characterized using a variety of techniques including: Scanning Electron
Microscopy (SEM), Transmission Electron Microscopy (TEM), and X-ray Diffraction (XRD).