2 September 2008 Charge carrier injection and transport in organic thin films
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Current density-voltage (J-V) characteristics of hole-only devices using indium tin oxide (ITO) anode and N,N'- diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (α-NPD) layer were measured with various thicknesses of a molybdenum oxide (MoO3) buffer layer inserted between ITO and α-NPD. The device with a 0.75-nm-thick MoO3 layer forms Ohmic hole injection at the ITO/MoO3/α-NPD interfaces and J-V characteristics of this device are controlled by a space-charge-limited current. Results of X-ray photoelectron and ultraviolet/visible/near-infrared absorption studies revealed that this Ohmic hole injection is attributable to electron transfers from ITO to MoO3 and from α-NPD to MoO3. Moreover, we demonstrated that the Ohmic hole injection is realized at the interfaces of ITO/rubrene and ITO/N,N'-di(m-tolyl)-N,N'-diphenylbenzidine (TPD) using an ultrathin MoO3 layer as well.
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Toshinori Matsushima, Toshinori Matsushima, Guang-He Jin, Guang-He Jin, Yoshihiro Kanai, Yoshihiro Kanai, Tomoyuki Yokota, Tomoyuki Yokota, Seiki Kitada, Seiki Kitada, Toshiyuki Kishi, Toshiyuki Kishi, Hideyuki Murata, Hideyuki Murata, } "Charge carrier injection and transport in organic thin films", Proc. SPIE 7051, Organic Light Emitting Materials and Devices XII, 705112 (2 September 2008); doi: 10.1117/12.793969; https://doi.org/10.1117/12.793969

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