7 October 2008 Schottky barrier formation using composite of polyaniline containing iron oxides
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Abstract
A composite of polyaniline (PANI) containing iron oxides (Fe3O4) with nanometer size was prepared by a chemical method. The electrical properties of (PANI-Fe3O4) sandwich structure using ohmic gold and blocking aluminium electrodes were studied. The current density - voltage (J-V) characteristics for the device resemble the typical dark current versus applied voltage characteristic for conventional Schottky diode. Electronic parameters have been calculated using J-V and capacitance-voltage (C-V) measurements.
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H. A. Motaweh, H. A. Motaweh, T. G. Abdel-Malik, T. G. Abdel-Malik, "Schottky barrier formation using composite of polyaniline containing iron oxides", Proc. SPIE 7052, Organic Photovoltaics IX, 705212 (7 October 2008); doi: 10.1117/12.793869; https://doi.org/10.1117/12.793869
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