Paper
25 August 2008 Application of redox doping in OTFTs
Tobias W. Canzler, Ulrich Denker, Omrane Fadhel, Qiang Huang, Carsten Rothe, Ansgar Werner
Author Affiliations +
Abstract
Molecular redox dopants are tested concerning their application to organic thin-film transistors (OTFT). Here we report on the feasibility of solution processing of molecular-doped transport layers, showing high air-stability of solutions and layers. We apply capacitance spectroscopy to investigate the interface of intrinsic and electrically doped layers. We also show that there is virtually no dopant migration in real devices, even when high electric fields up to 300 kV/cm2 are applied for 1000 h. We report on p- and n-type on OTFTs with silver contacts. The application of injection layers based on redox dopants improves the measured field-effect mobility by about 2 orders of magnitude.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tobias W. Canzler, Ulrich Denker, Omrane Fadhel, Qiang Huang, Carsten Rothe, and Ansgar Werner "Application of redox doping in OTFTs", Proc. SPIE 7054, Organic Field-Effect Transistors VII and Organic Semiconductors in Sensors and Bioelectronics, 70540O (25 August 2008); https://doi.org/10.1117/12.792734
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Doping

Silver

Interfaces

Resistance

Organic light emitting diodes

Thin films

Electrodes

Back to Top