25 August 2008 Application of redox doping in OTFTs
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Abstract
Molecular redox dopants are tested concerning their application to organic thin-film transistors (OTFT). Here we report on the feasibility of solution processing of molecular-doped transport layers, showing high air-stability of solutions and layers. We apply capacitance spectroscopy to investigate the interface of intrinsic and electrically doped layers. We also show that there is virtually no dopant migration in real devices, even when high electric fields up to 300 kV/cm2 are applied for 1000 h. We report on p- and n-type on OTFTs with silver contacts. The application of injection layers based on redox dopants improves the measured field-effect mobility by about 2 orders of magnitude.
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Tobias W. Canzler, Tobias W. Canzler, Ulrich Denker, Ulrich Denker, Omrane Fadhel, Omrane Fadhel, Qiang Huang, Qiang Huang, Carsten Rothe, Carsten Rothe, Ansgar Werner, Ansgar Werner, } "Application of redox doping in OTFTs", Proc. SPIE 7054, Organic Field-Effect Transistors VII and Organic Semiconductors in Sensors and Bioelectronics, 70540O (25 August 2008); doi: 10.1117/12.792734; https://doi.org/10.1117/12.792734
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