3 September 2008 InAs quantum-dot intersubband optical amplifier
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Proceedings Volume 7055, Infrared Systems and Photoelectronic Technology III; 705503 (2008); doi: 10.1117/12.796706
Event: Photonic Devices + Applications, 2008, San Diego, California, United States
Abstract
A coupled quantum dot intersubband optical amplifier structure is reported. InGaAsP/GaAs supperlattice is used to effectively generate population inversion between the excited states and the ground state of the QD. Due to the three-dimensional quantum confinement, normal incidence optical amplification with low threshold current density can be expected. Such an intersubband optical amplifier is promising for highly-sensitive middle infrared (MWIR) and longwave infrared sensing and imaging.
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Xuejun Lu, "InAs quantum-dot intersubband optical amplifier", Proc. SPIE 7055, Infrared Systems and Photoelectronic Technology III, 705503 (3 September 2008); doi: 10.1117/12.796706; https://doi.org/10.1117/12.796706
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KEYWORDS
Optical amplifiers

Long wavelength infrared

Infrared imaging

Infrared radiation

Mid-IR

Electrons

Indium arsenide

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