Improved spectral response model for backside illuminated photovoltaic devices

Priyalal S. Wijewarnasuriya; M. G. Stapelbroek; A. I. D'Souza

doi:10.1117/12.793820

3 September 2008 Improved spectral response model for backside illuminated photovoltaic devices

Priyalal S. Wijewarnasuriya, M. G. Stapelbroek, A. I. D'Souza

Proceedings Volume 7055, Infrared Systems and Photoelectronic Technology III; 70550D (2008) https://doi.org/10.1117/12.793820
Event: Photonic Devices + Applications, 2008, San Diego, California, United States

Abstract

Backside illuminated detectors are sometimes fabricated on a thick substrates. In this work, we have calculated detector spectral response using the stack matrix approach. This matrix formulation first constructs a 2x2 "Stack Matrix" S that describes the optical properties of the complete stack from the detailed optical properties (as a function of wavelength) of each layer in the entire stack. The stack matrix relates the electric field strengths of the electromagnetic wave at the left of the stack to the electric field strengths of the electromagnetic waves at the right of the stack. The stack matrix S is constructed from the multiplication of matrices that track the phase and amplitude of the waves propagating across interfaces and from one side of a layer to the other side. From the detailed optical properties (as a function of wavelength) of each material layer, spectral response was calculated.

Citation Download Citation

Priyalal S. Wijewarnasuriya, M. G. Stapelbroek, and A. I. D'Souza "Improved spectral response model for backside illuminated photovoltaic devices", Proc. SPIE 7055, Infrared Systems and Photoelectronic Technology III, 70550D (3 September 2008); https://doi.org/10.1117/12.793820

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