Paper
26 August 2008 Near-infrared enhanced position-sensitive avalanche photodiodes
Richard A. Myers, Richard Farrell, Frank Robertson, James E. Carey, Eric Mazur
Author Affiliations +
Abstract
A laser processing method was used to microstructure the surface of position-sensitive silicon avalanche photodiodes (PSAPDs) and enhance their near-infrared response. Following laser microstructuring and high-temperature annealing, experiments were performed on PSAPDs to determine their performance at 1064 nm. As a result of this processing method, we fabricated APDs with quantum efficiencies as high as 58% at 1064 nm. The enhanced near-infrared response has now been realized in both lateral effect and quadrant-type PSAPDs without altering their electronic noise, avalanche gain or position resolution. A near-infrared-enhanced PSAPD module with temperature control and position output was assembled and tested.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard A. Myers, Richard Farrell, Frank Robertson, James E. Carey, and Eric Mazur "Near-infrared enhanced position-sensitive avalanche photodiodes", Proc. SPIE 7055, Infrared Systems and Photoelectronic Technology III, 70550L (26 August 2008); https://doi.org/10.1117/12.794866
Lens.org Logo
CITATIONS
Cited by 1 scholarly publication.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Sensors

Avalanche photodetectors

Near infrared

Silicon

Quantum efficiency

Head

Semiconductor lasers

Back to Top