25 August 2008 Floating zone growth of Ni-doped MgGa2O4 single crystal for near-infrared tunable laser
Author Affiliations +
Abstract
Crystal growth and spectroscopic characterization of Ni-doped MgGa2O4 belonging to inverse-spinel structure crystal family are described. Single crystals of this material were grown by floating zone method for the first time. Oxygen gas flow was essential to minimize evaporation of Ga2O3 during the floating zone crystal growth process. Bubble and inclusion-free crystals were obtained for the growth rate less than 5 mm/hour. Ni:MgGa2O4 single crystal was characterized by broadband fluorescence in 1100-1600 nm wavelength range and 1.6 msec room-temperature lifetime. It could be attributed to the transition of 3T2(3F)→3A(2F) transition of the octahedrally coordinated Ni2+. The internal quantum efficiency of the near-infrared fluorescence was about 82 % for 1 mol% Ni-doped MgGa2O4 single crystal at room temperature. The new material is to be very promising for tunable laser applications covering the important optical communication, eye safe, 1100-1600 nm wavelength.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takenobu Suzuki, Takenobu Suzuki, Yusuke Arai, Yusuke Arai, Yasutake Ohishi, Yasutake Ohishi, } "Floating zone growth of Ni-doped MgGa2O4 single crystal for near-infrared tunable laser", Proc. SPIE 7056, Photonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications II, 70561B (25 August 2008); doi: 10.1117/12.794141; https://doi.org/10.1117/12.794141
PROCEEDINGS
8 PAGES


SHARE
Back to Top