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2 September 2008 Analysis of strain relaxation and emission spectrum of a free-standing GaN-based nanopillar
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Abstract
We have made a GaN-based single nanopillar with a diameter of 300nm using the focused ion beam (FIB) technique. The micro-photoluminescence (μ-PL) from the embedded GaN/InGaN multi-quantum wells reveals a blue shift of 68.3 meV in energy. In order to explain the spectrum shift, we have developed a valence force field model to study the strain relaxation mechanism in a single GaN-based nanopillar structure. The strain distribution and strain induced polarization effect inside the multiple quantum wells is added to our self-consistent Poisson, drift-diffusion, and Schrodinger solver to study the spectrum shift of μ-PL.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuh-Renn Wu, Peichen Yu, C. H. Chiu, Cheng-Yu Chang, and H. C. Kuo "Analysis of strain relaxation and emission spectrum of a free-standing GaN-based nanopillar", Proc. SPIE 7058, Eighth International Conference on Solid State Lighting, 70580G (2 September 2008); https://doi.org/10.1117/12.800658
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