2 September 2008 Effect of PdZn film on the performance of green light-emitting diodes
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Abstract
PdZn was used to improve the electrical properties of p-GaN annealed at low activation temperature for high efficiency green light-emitting diodes (LEDs). A hole concentration of p-GaN annealed at 600 °C with PdZn was almost 28 times higher than that of p-GaN annealed at 800 °C without PdZn. SIMS analysis showed that hydrogen concentration in p-GaN annealed with PdZn is decreased compared to that without using PdZn because the PdZn enhances hydrogen desorption from the Mg-doped p-GaN film at low temperature. The green MQW LED annealed at 600 °C using PdZn showed improved electrical characteristic and optical output power compared to that annealed at 800 °C without using PdZn. These results are attributed to the increase of hole concentration of p-GaN due to removal of hydrogen in p-GaN by PdZn and the decrease in thermal damage of MQW at low activation temperature.
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Ja-Yeon Kim, Ja-Yeon Kim, Min-Ki Kwon, Min-Ki Kwon, Chu Young Cho, Chu Young Cho, Sang-Jun Lee, Sang-Jun Lee, Seong-Ju Park, Seong-Ju Park, Sunwoon Kim, Sunwoon Kim, Je Won Kim, Je Won Kim, Yong Chun Kim, Yong Chun Kim, } "Effect of PdZn film on the performance of green light-emitting diodes", Proc. SPIE 7058, Eighth International Conference on Solid State Lighting, 70580I (2 September 2008); doi: 10.1117/12.794535; https://doi.org/10.1117/12.794535
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