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3 September 2008MOVPE growth of AlGaN/GaN superlattices on ZnO substrates for green emitter applications
GaN epilayers and AlGaN/GaN superlattice structures have been deposited on (0001) ZnO substrates by
metalorganic vapor phase epitaxy (MOVPE) using GaN and AlN buffer layers. The growth conditions were first
optimized on GaN templates using N2 as carrier gas at relatively low temperature (<800 °C), which is suitable for
GaN growth on a ZnO substrate. Experimental results show that high interfacial quality can be achieved in the
superlattice by using TMIn as a surfactant. The optimized growth conditions were subsequently transferred to ZnO
substrates. The influence of growth temperature on the material quality was studied. A proper growth temperature for
both GaN cover layer and AlGaN/GaN superlattice can improve the structural and optical properties of the structures
on ZnO. This improvement is verified using x-ray diffraction, atomic force microscopy and photoluminescence
characterizations. The growth temperature must be chosen with these two factors in mind, with too low a growth
temperature leading to poor quality material and too high a temperature causing reactions at the GaN/ZnO interface
that degrade quality. AlN buffer layers on ZnO were also studied to increase subsequent GaN epilayer quality.
Effects of buffer layer growth conditions on optical and structural quality were studied.
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Hongbo Yu, Shenjie Wang, Nola Li, William Fenwick, Andrew Melton, Matthew H. Kane, B. Klein, Ian Ferguson, "MOVPE growth of AlGaN/GaN superlattices on ZnO substrates for green emitter applications," Proc. SPIE 7058, Eighth International Conference on Solid State Lighting, 70580V (3 September 2008); https://doi.org/10.1117/12.798540