29 August 2008 SiNx optical thin films prepared by RF ion-beam sputtering and residual stress elimination technique
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Proceedings Volume 7067, Advances in Thin-Film Coatings for Optical Applications V; 70670K (2008); doi: 10.1117/12.795846
Event: Optical Engineering + Applications, 2008, San Diego, California, United States
Abstract
SiNx thin films deposited by RF ion-beam sputtering have been investigated. The influence of composition of Nitrogen (N2) and Argon (Ar) gases and ion-beam voltages on the refractive index and extinction coefficient of SiNx films was discussed. By varying the amount of N2 and Ar flow and ion-beam voltage, the optimal refractive index, extinction coefficient (at wavelength of 550 nm) and deposition rate were 2.07, 8* 10-5 and 0.189 nm/s, respectively. The residual stress of the SiNx films varied from -1.38 to -2.17GPa depending on the ion-beam voltage. To maintain the good optical properties and reduce the residual stress of films deposited at ion-beam voltage 1300V, one may decrease the ion-beam current. Alternatively, one may introduce interfaces between layers. 770MPa of the residual stress was reduced as a film was divided into four layers with three interfaces.
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Kun-Hsien Lee, Chien-Jen Tang, Cheng-Chung Jaing, Hsi-Chao Chen, Cheng-Chung Lee, "SiNx optical thin films prepared by RF ion-beam sputtering and residual stress elimination technique", Proc. SPIE 7067, Advances in Thin-Film Coatings for Optical Applications V, 70670K (29 August 2008); doi: 10.1117/12.795846; https://doi.org/10.1117/12.795846
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KEYWORDS
Ion beams

Refractive index

Argon

Thin films

Sputter deposition

Interfaces

Silicon

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