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3 September 2008 Temperature and field effects on reflectivity of gallium selenide surface
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Monocrystals of gallium selenide (GaSe) has recently attracted significant attention in the field of new optoelectronic devices, due to the original combination of its specific features such as nonlinear optical properties, layered structure and high-photo sensitivity. GaSe crystals show both high reflectivity and unique surface perfection, which leads to a promising candidate for next generation optical devices. We will present our experimental results of reflection spectra of such crystals for various temperatures (273°K-383°K) and applied electric field (1 V/cm - 20 V/cm). The reflection spectra were analyzed to identify the mechanism of the reflective coefficient change in GaSe as a function of wavelength, temperature and electric field. This study will identify the optimal electrical field regimes and spectral segments, where we experimentally revealed reflective properties of GaSe are suitable for creating the field regulated optical applications of decoder and depolarizer. The temperature dependence of GaSe reflectance spectrum, its temperature and applied field dependences exemplified that the processes of photon-electron inter-exchanging on the surfaces are dominated over the bulk processes in forming the reflectance properties of layered crystals. The perfectness of natural surface and their high reflective properties weren't changed in the interval of experimental temperatures. The monolayer surface of GaSe can be utilized as an easy prepared natural plane surface for new optical devices on their surface basis in their original combinations. Such devises are applicable for optical information processing systems because of the stability function and weak dependence of the function of bulk properties.
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Bader Alhasson, Yashar Hajiyev, and Mohammad Matin "Temperature and field effects on reflectivity of gallium selenide surface", Proc. SPIE 7072, Optics and Photonics for Information Processing II, 70720Q (3 September 2008);

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