10 September 2008 Designs for micro-structured semiconductor neutron detectors
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Abstract
Perforated semiconductor diode detectors have been under development for several years at Kansas State University for a variety of neutron detection applications. The fundamental device configuration is a pin diode detector fabricated from high-purity float-zone refined Si wafers. Perforations are etched into the diode surface with inductively-coupled plasma reactive ion etching and backfilled with 6LiF neutron reactive material. The perforation shapes and depths can be optimized to yield a flat response to neutrons over a wide variation of angles. The intrinsic thermal neutron detection efficiency depends strongly upon the geometry, size, and depth of the perforations. Here three basic geometry models are compared. The energy deposition spectra and detection efficiency are estimated for rod-shaped perforations, linear trench perforations and for perforations leaving silicon pillars. These three designs are found to have distinct differences in their capabilities. Besides model calculations, practical considerations for fabricating such neutron detectors are also discussed.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Kenneth Shultis, Douglas S. McGregor, "Designs for micro-structured semiconductor neutron detectors", Proc. SPIE 7079, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics X, 707906 (10 September 2008); doi: 10.1117/12.797477; https://doi.org/10.1117/12.797477
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