4 September 2008 Layered III-VI chalcogenide semiconductor crystals for radiation detectors
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Abstract
The layered anisotropic chalcogenide semiconductors GaSe and GaTe single crystals have been grown by a modified vertical Bridgman technique using high purity Ga (7N) and in-house zone refined (ZR) precursor materials (Se and Te). The crystals harvested from ingots of up to 10 cm length and up to 2" diameter, have been characterized by measuring resistivity through current-voltage (I-V) characteristics and bulk carrier concentration and mobility through Hall effect measurements. Micro-hardness, infrared microscopy, etching characteristics, low-temperature photoluminescence (PL) and contact resistivity studies have also been performed to further characterize the grown crystals.
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Krishna C. Mandal, Alket Mertiri, Gary W. Pabst, Ronald G. Roy, Y. Cui, P. Battacharya, M. Groza, A. Burger, Adam M. Conway, Rebecca J. Nikolic, Art J. Nelson, Stephen A. Payne, "Layered III-VI chalcogenide semiconductor crystals for radiation detectors", Proc. SPIE 7079, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics X, 70790O (4 September 2008); doi: 10.1117/12.796235; https://doi.org/10.1117/12.796235
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