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3 September 2008 Very high performance LWIR and VLWIR Type-II InAs/GaSb superlattice photodiodes with M-structure barrier
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Abstract
LWIR and VLWIR type II InAs/GaSb superlattice photodetectors have for long time suffered from a high dark current level and a low dynamic resistance which hampers the its emergence to the infrared detection and imaging industry. However, with the use of M-structure superlattice, a new type II binary InAs/GaSb/AlSb superlattice design, as an effective blocking barrier, the dark current in type II superlattice diode has been significantly reduced. We have obtained comparable differential resistance product to the MCT technology at the cut-off wavelength of 10 and 14μm. Also, this new design is compatible with the optical optimization scheme, leading to high quantum efficiency, high special detectivity devices for photon detectors and focal plane arrays.
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Binh-Minh Nguyen, Darin Hoffman, Pierre-Yves Delaunay, Edward Kwei-wei Huang, and Manijeh Razeghi "Very high performance LWIR and VLWIR Type-II InAs/GaSb superlattice photodiodes with M-structure barrier", Proc. SPIE 7082, Infrared Spaceborne Remote Sensing and Instrumentation XVI, 708205 (3 September 2008); doi: 10.1117/12.794210; https://doi.org/10.1117/12.794210
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