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3 September 2008 Hydrostatic pressure dependence of intersubband transitions of HgTe/Hg1-xCdxTe superlattices and FIR detector applications
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Detectors in the far infrared based on HgTe/Hg1-xCdxTe superlattices (SL's) are superior to those based on Hg1-xCdxTe alloys. This is based on their band structure, however, it was concluded in an investigation of the hydrostatic pressure dependence of photoluminescence (PL) peaks investigation reported in Phys. Rev. B 48, 4460 (1993) that either the band structure model was incorrect or the observed PL peaks were related to impurities. In contrast, in optical absorption experiments, the hydrostatic pressure dependence of intersubband transitions agrees with theory, which corroborates the validity of the band structure model. The first advantage is the required precision of the growth parameters for the desired band gap or cut off wavelength (λco). More important is the possibility to significantly reduce leak currents by the appropriate choice of barrier thickness. Furthermore the absorption edge is much steeper and therefore the SL can be much thinner. Due to Auger suppression in these type III SL's, carrier lifetimes are significantly enhanced. Finally the SL is significantly less susceptible to a Burstein-Moss shift of the adsorption edge; at least an order of magnitude greater electron concentration is necessary in order to produce the same Burstein-Moss shift. A method for <i>in situ p</i> type doped quantum wells (QW's) and SL's with nitrogen and arsenic by means of molecular beam epitaxy (MBE) is discussed.
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C. R. Becker, K. Ortner, V. Latussek, C. H. Grein, and S. Sivananthan "Hydrostatic pressure dependence of intersubband transitions of HgTe/Hg1-xCdxTe superlattices and FIR detector applications", Proc. SPIE 7082, Infrared Spaceborne Remote Sensing and Instrumentation XVI, 70820C (3 September 2008);


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