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26 August 2008 Fabrication, characterization of II-VI semiconductor nanowires and applications in infrared focal plane arrays
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Abstract
The fragile nature of alumina and the intrinsic Al2O3 barrier layer at the pore bases has hindered its use in optoelectronic devices. In this work, these issues have been addressed by the development of a nanoporous alumina template directly on a silicon substrate with platinum electrodes at the pore bases. This template was then used to perform dc galvanostatic electrochemical deposition of II-VI semiconductor heterostructure nanowires that were then used to fabricate pixilated detector arrays.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael M. Crouse, Thomas L. James, and David Crouse "Fabrication, characterization of II-VI semiconductor nanowires and applications in infrared focal plane arrays", Proc. SPIE 7095, Nanophotonics and Macrophotonics for Space Environments II, 70950J (26 August 2008); https://doi.org/10.1117/12.795399
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